The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films
Identifieur interne : 000348 ( Main/Repository ); précédent : 000347; suivant : 000349The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films
Auteurs : RBID : Pascal:13-0350139Descripteurs français
- Pascal (Inist)
- Stoechiométrie, Température recuit, Recuit thermique, Dépendance température, Couche mince, Evaporation faisceau électronique, Spectre absorption, Bande interdite photonique, Propriété optique, Diffraction RX, Structure chalcopyrite, Orientation préférentielle, Plan cristallographique, Paramètre cristallin, Structure cristalline, Morphologie surface, Microscopie force atomique, Microscopie électronique balayage, Microstructure, Cuivre, Indium, Gallium, Séléniure, Chalcopyrite, 8115K, 7866, 6855J.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
- Absorption spectra, Annealing temperature, Atomic force microscopy, Chalcopyrite, Chalcopyrite structure, Copper, Crystal structure, Crystallographic plane, Electron beam evaporation, Gallium, Indium, Lattice parameters, Microstructure, Optical properties, Photonic band gap, Preferred orientation, Scanning electron microscopy, Selenides, Stoichiometry, Surface morphology, Temperature dependence, Thermal annealing, Thin films, XRD.
Abstract
CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films have been prepared by the electron beam evaporation technique and annealed at various temperatures (450 °C, 475 °C, 500 °C, 525 °C and 600 °C). Optical transmittance measurements have been carried out in the wavelength range 300-1200 nm. The films show high absorption in the solar radiation spectral range, and their optical band gaps range from 1.33 eV to 1.22 eV for CuIn0.7Ga0.3Se2 and from 1.13 eV to 1.06 eV for CuIn0.7Ga0.3Te2, depending on the annealing temperature. X-ray diffraction (XRD) indicates the films are crystallized in a single phase with the chalcopyrite structure and a preferred orientation along the (112) plane. The dependence of the lattice parameters on the composition of the films is investigated. Surface morphology has been determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). These results are correlated with the XRD microstructural analysis.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000542
Links to Exploration step
Pascal:13-0350139Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The influence of stoichiometry and annealing temperature on the properties of CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2 </sub>and CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Te<sub>2 </sub>thin films</title><author><name sortKey="Fiat, S" uniqKey="Fiat S">S. Fiat</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>GaziosmanpaşaUniversity, Faculty of Arts and Sciences, Physics Department</s1><s2>60240 Tokat</s2><s3>TUR</s3><sZ>1 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>60240 Tokat</wicri:noRegion></affiliation></author><author><name sortKey="Koralli, P" uniqKey="Koralli P">P. Koralli</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Mechanical Engineering, National Technical University of Athens, 9, Iroon Polytechniou, Zografos</s1><s2>15780 Athens</s2><s3>GRC</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>15780 Athens</wicri:noRegion></affiliation></author><author><name sortKey="Bacaksiz, E" uniqKey="Bacaksiz E">E. Bacaksiz</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Karadeniz Technical University, Faculty of Arts and Sciences, Physics Department</s1><s2>61080 Trabzon</s2><s3>TUR</s3><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>61080 Trabzon</wicri:noRegion></affiliation></author><author><name sortKey="Giannakopoulos, K P" uniqKey="Giannakopoulos K">K. P. Giannakopoulos</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>N.C.S.R. "Demokritos," Institute for Advanced Materials, Physicochemical Processes, Nanotechnology and Microsystems</s1><s2>15310 Aghia Paraskevi, Athens</s2><s3>GRC</s3><sZ>4 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>15310 Aghia Paraskevi, Athens</wicri:noRegion></affiliation></author><author><name sortKey="Kompitsas, M" uniqKey="Kompitsas M">M. Kompitsas</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute</s1><s2>11635 Athens</s2><s3>GRC</s3><sZ>5 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>11635 Athens</wicri:noRegion></affiliation></author><author><name sortKey="Manolakos, D E" uniqKey="Manolakos D">D. E. Manolakos</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Mechanical Engineering, National Technical University of Athens, 9, Iroon Polytechniou, Zografos</s1><s2>15780 Athens</s2><s3>GRC</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>15780 Athens</wicri:noRegion></affiliation></author><author><name sortKey="Cankaya, G" uniqKey="Cankaya G">G. Cankaya</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Yildirim Beyazit University, Faculty of Engineering and Natural Sciences, Materials Engineering</s1><s2>06030 Ankara</s2><s3>TUR</s3><sZ>7 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06030 Ankara</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0350139</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0350139 INIST</idno><idno type="RBID">Pascal:13-0350139</idno><idno type="wicri:Area/Main/Corpus">000542</idno><idno type="wicri:Area/Main/Repository">000348</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Annealing temperature</term><term>Atomic force microscopy</term><term>Chalcopyrite</term><term>Chalcopyrite structure</term><term>Copper</term><term>Crystal structure</term><term>Crystallographic plane</term><term>Electron beam evaporation</term><term>Gallium</term><term>Indium</term><term>Lattice parameters</term><term>Microstructure</term><term>Optical properties</term><term>Photonic band gap</term><term>Preferred orientation</term><term>Scanning electron microscopy</term><term>Selenides</term><term>Stoichiometry</term><term>Surface morphology</term><term>Temperature dependence</term><term>Thermal annealing</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Stoechiométrie</term><term>Température recuit</term><term>Recuit thermique</term><term>Dépendance température</term><term>Couche mince</term><term>Evaporation faisceau électronique</term><term>Spectre absorption</term><term>Bande interdite photonique</term><term>Propriété optique</term><term>Diffraction RX</term><term>Structure chalcopyrite</term><term>Orientation préférentielle</term><term>Plan cristallographique</term><term>Paramètre cristallin</term><term>Structure cristalline</term><term>Morphologie surface</term><term>Microscopie force atomique</term><term>Microscopie électronique balayage</term><term>Microstructure</term><term>Cuivre</term><term>Indium</term><term>Gallium</term><term>Séléniure</term><term>Chalcopyrite</term><term>8115K</term><term>7866</term><term>6855J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub> and CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Te<sub>2</sub> thin films have been prepared by the electron beam evaporation technique and annealed at various temperatures (450 °C, 475 °C, 500 °C, 525 °C and 600 °C). Optical transmittance measurements have been carried out in the wavelength range 300-1200 nm. The films show high absorption in the solar radiation spectral range, and their optical band gaps range from 1.33 eV to 1.22 eV for CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub> and from 1.13 eV to 1.06 eV for CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Te<sub>2</sub>, depending on the annealing temperature. X-ray diffraction (XRD) indicates the films are crystallized in a single phase with the chalcopyrite structure and a preferred orientation along the (112) plane. The dependence of the lattice parameters on the composition of the films is investigated. Surface morphology has been determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). These results are correlated with the XRD microstructural analysis.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>545</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>The influence of stoichiometry and annealing temperature on the properties of CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2 </sub>and CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Te<sub>2 </sub>thin films</s1></fA08><fA11 i1="01" i2="1"><s1>FIAT (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>KORALLI (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>BACAKSIZ (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>GIANNAKOPOULOS (K. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>KOMPITSAS (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>MANOLAKOS (D. E.)</s1></fA11><fA11 i1="07" i2="1"><s1>CANKAYA (G.)</s1></fA11><fA14 i1="01"><s1>GaziosmanpaşaUniversity, Faculty of Arts and Sciences, Physics Department</s1><s2>60240 Tokat</s2><s3>TUR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>School of Mechanical Engineering, National Technical University of Athens, 9, Iroon Polytechniou, Zografos</s1><s2>15780 Athens</s2><s3>GRC</s3><sZ>2 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Karadeniz Technical University, Faculty of Arts and Sciences, Physics Department</s1><s2>61080 Trabzon</s2><s3>TUR</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>N.C.S.R. "Demokritos," Institute for Advanced Materials, Physicochemical Processes, Nanotechnology and Microsystems</s1><s2>15310 Aghia Paraskevi, Athens</s2><s3>GRC</s3><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute</s1><s2>11635 Athens</s2><s3>GRC</s3><sZ>5 aut.</sZ></fA14><fA14 i1="06"><s1>Yildirim Beyazit University, Faculty of Engineering and Natural Sciences, Materials Engineering</s1><s2>06030 Ankara</s2><s3>TUR</s3><sZ>7 aut.</sZ></fA14><fA20><s1>64-70</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504221210110</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0350139</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub> and CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Te<sub>2</sub> thin films have been prepared by the electron beam evaporation technique and annealed at various temperatures (450 °C, 475 °C, 500 °C, 525 °C and 600 °C). Optical transmittance measurements have been carried out in the wavelength range 300-1200 nm. The films show high absorption in the solar radiation spectral range, and their optical band gaps range from 1.33 eV to 1.22 eV for CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub> and from 1.13 eV to 1.06 eV for CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Te<sub>2</sub>, depending on the annealing temperature. X-ray diffraction (XRD) indicates the films are crystallized in a single phase with the chalcopyrite structure and a preferred orientation along the (112) plane. The dependence of the lattice parameters on the composition of the films is investigated. Surface morphology has been determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). These results are correlated with the XRD microstructural analysis.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Température recuit</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Annealing temperature</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Temperatura recocido</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dépendance température</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Couche mince</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Thin films</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Evaporation faisceau électronique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Electron beam evaporation</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Bande interdite photonique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Photonic band gap</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété optique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Optical properties</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Structure chalcopyrite</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Chalcopyrite structure</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Estructura calcopirita</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Plan cristallographique</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Crystallographic plane</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Plano cristalográfico</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Paramètre cristallin</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Lattice parameters</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Crystal structure</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Surface morphology</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Microstructure</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Microstructure</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>36</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>36</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Séléniure</s0><s2>NA</s2><s5>37</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Selenides</s0><s2>NA</s2><s5>37</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>38</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>38</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>329</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000348 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000348 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0350139
|texte= The influence of stoichiometry and annealing temperature on the properties of CuIn0.7Ga0.3Se2 and CuIn0.7Ga0.3Te2 thin films
}}
| This area was generated with Dilib version V0.5.77. |  |